| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Dissipation | 313000 mW |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Reverse recovery time | 535 ns |
| Input Power (Max) | 313 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 313000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Using advanced field stop trench IGBT technology, Fairchild’s 1200V trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.
●Features
●---
● |
● High speed switching
● Low saturation voltage: VCE(sat) = 1.60V @ IC = 25A
● High input impedance
● RoHS compliant
ON Semiconductor
2 Pages / 0.13 MByte
ON Semiconductor
2 Pages / 0.05 MByte
ON Semiconductor
Trans IGBT Chip N-CH 1200V 50A 313000mW 3Pin(3+Tab) TO-3PN Tube
Fairchild
Trans IGBT Chip N-CH 1.2kV 50A 3Pin(3+Tab) TO-3PN Tube
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