| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 463 W |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 55 ns |
| Input Power (Max) | 463 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 463000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not For New Designs |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FGH50N6S2D is a 600V N-channel IGBT with anti-parallel stealth diode. The SMPS II series is a combination of the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS). This LGC device shortens delay times and reduce the power requirement of the gate drive. This device is ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for power factor correction (PFC) circuits, full bridge topologies, half bridge topologies, push-pull circuits, uninterruptible power supplies and zero voltage and zero current switching circuits. This product is general usage and suitable for many different applications.
● 100kHz Operation at 390V, 40A
● 200kHZ Operation at 390V, 25A
● 600V Switching SOA capability
● 90ns Fall time
● UIS Rated
ON Semiconductor
9 Pages / 0.19 MByte
ON Semiconductor
4 Pages / 0.09 MByte
ON Semiconductor
21 Pages / 0.73 MByte
Fairchild
Trans IGBT Chip N-CH 600V 75A 3Pin(3+Tab) TO-247 Rail
ON Semiconductor
Trans IGBT Chip N-CH 600V 75A 463000mW 3Pin(3+Tab) TO-247 Rail
Fairchild
FAIRCHILD SEMICONDUCTOR FGH50N6S2D IGBT Single Transistor, 75A, 2.7V, 463W, 600V, TO-247, 3Pins
ON Semiconductor
Trans IGBT Chip N-CH 600V 75A 463000mW 3Pin(3+Tab) TO-247 Tube
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