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FGY60T120SQDN
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FGY60T120SQDN Datasheet PDF - ON Semiconductor

Manufacturer:ON Semiconductor
Case Package:TO-247-3
Description:Trans IGBT Chip N-CH 1200V 120A 517000mW 3-Pin(3+Tab) TO-247 Tube
Documentation:FGY60T120SQDN Datasheet (9 Pages)
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FGY60T120SQDN Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-247-3
Number of Positions3 Position
Power Dissipation517 W
Breakdown Voltage (Collector to Emitter)1200 V
Input Power (Max)517 W
Operating Temperature (Max)175 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)517000 mW
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FGY60T120SQDN Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Operating Temperature-55℃ ~ 175℃ (TJ)
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FGY60T120SQDN Documents

FGY60T120SQDN Datasheet
ON Semiconductor
9 Pages / 0.53 MByte
FGY60T120SQDN Other Datasheet PDF
ON Semiconductor
9 Pages / 0.53 MByte

FGY60T120 Documents

FGY60T120SQDN Datasheet PDF
ON Semiconductor
Trans IGBT Chip N-CH 1200V 120A 517000mW 3-Pin(3+Tab) TO-247 Tube
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