| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 80 W |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| hFE Min | 1000 @3A, 4V |
| Input Power (Max) | 80 W |
| DC Current Gain (hFE) | 200 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 80000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | 150℃ (TJ) |
The FJB102TM is a NPN high voltage power Darlington Transistor offers low collector-emitter saturation voltage.
● High DC current gain (1000 hFE @ 4V VCE, 3A minimum IC)
ON Semiconductor
7 Pages / 0.32 MByte
ON Semiconductor
18 Pages / 0.94 MByte
ON Semiconductor
7 Pages / 0.87 MByte
ON Semiconductor
1 Pages / 0.13 MByte
Fairchild
FJB Series NPN 80W 100V 8A SMT Power Darlington Transistor - D2PAK-3
ON Semiconductor
Trans Darlington NPN 100V 8A 80000mW 3Pin(2+Tab) D2PAK T/R
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