TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-264-3 |
Number of Positions | 3 Position |
Power Dissipation | 200 W |
Breakdown Voltage (Collector to Emitter) | 800 V |
Input Power (Max) | 200 W |
DC Current Gain (hFE) | 5 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 200000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Material | Silicon |
Operating Temperature | 150℃ (TJ) |
Bipolar (BJT) Transistor NPN 800V 20A 200W Through Hole TO-264-3
ON Semiconductor
5 Pages / 0.22 MByte
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Trans GP BJT NPN 800V 20A 3Pin(3+Tab) TO-264 Rail
Fairchild
Trans GP BJT NPN 800V 20A 3Pin(3+Tab) TO-264 Rail
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TRANS NPN 800V 20A TO-264
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