| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 4 MHz |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 100 W |
| Breakdown Voltage (Collector to Emitter) | 400 V |
| hFE Min | 15 @5A, 5V |
| Input Power (Max) | 100 W |
| DC Current Gain (hFE) | 8 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 100000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 9.9 mm |
| Size-Width | 4.5 mm |
| Size-Height | 9.2 mm |
| Operating Temperature | -65℃ ~ 150℃ |
The FJP13009H2TU is a high voltage fast-switching NPN epitaxial planar Power Transistor. The FJP13009H2TU is available with multiple hFE bin classes for ease of design use. Designed for high speed switching applications and offers excellent power dissipation.
● High voltage capability
● High switching speed
● 700V Collector-base voltage
● 9V Emitter-base voltage
● 6A Base current
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