TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 100 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 120 V |
Current Rating | 50.0 mA |
Case/Package | SOT-23-3 |
Number of Positions | 3 Position |
Polarity | NPN |
Power Dissipation | 300 mW |
Breakdown Voltage (Collector to Emitter) | 120 V |
Continuous Collector Current | 0.05A |
hFE Min | 300 @1mA, 6V |
hFE Max | 1200 |
Input Power (Max) | 300 mW |
DC Current Gain (hFE) | 300 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 300 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 2.9 mm |
Size-Width | 1.3 mm |
Size-Height | 0.93 mm |
Operating Temperature | 150℃ (TJ) |
The FJV1845FMTF is a NPN silicon epitaxial Bipolar Transistor suitable for amplifier applications. It offers 50mA collector current and 300mW collector dissipation.
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