Description
●The FM24C64B is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.
●Features
●64K bit Ferroelectric Nonvolatile RAM
●• Organized as 8,192 x 8 bits
●• High Endurance 1 Trillion (1012) Read/Writes
●• 38 Year Data Retention
●• NoDelay™ Writes
●• Advanced High-Reliability Ferroelectric Process
●Fast Two-wire Serial Interface
●• Up to 1 MHz maximum bus frequency
●• Direct hardware replacement for EEPROM
●• Supports legacy timing for 100 kHz & 400 kHz
●Low Power Operation
●• 5V operation
●• 100 µA Active Current (100 kHz)
●• 4 µA (typ.) Standby Current
●Industry Standard Configuration
●• Industrial Temperature -40°C to +85°C
●• 8-pin “Green”/RoHS SOIC (-G)
