Description
●The FM24CL16 is a 16-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 45 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.
●Features
●16K bit Ferroelectric Nonvolatile RAM
●• Organized as 2,048 x 8 bits
●• Unlimited Read/Write Cycles
●• 45 year Data Retention
●• NoDelay™ Writes
●• Advanced High-Reliability Ferroelectric Process
●Fast Two-wire Serial Interface
●• Up to 1MHz Maximum Bus Frequency
●• Direct Hardware Replacement for EEPROM
●Low Power Operation
●• 2.7 - 3.65V Operation
●• 75 µA Active Current (100 kHz) @ 3V
●• 1 µA Standby Current
●Industry Standard Configuration
●• Industrial Temperature -40° C to +85° C
●• 8-pin SOIC and 8-pin TDFN Packages
●• TDFN Footprint Conforms to TSSOP-8
●• “Green” Packaging Options
