TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 40 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 100 V |
Current Rating | 500 mA |
Case/Package | SOT-23-3 |
Polarity | NPN |
Power Dissipation | 0.5 W |
Breakdown Voltage (Collector to Emitter) | 100 V |
Continuous Collector Current | 0.5A |
hFE Min | 25 @10mA, 10V |
hFE Max | 25 @10mA, 10V |
Input Power (Max) | 330 mW |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 330 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Width | 1.4 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The versatility of this NPN FMMT415TD GP BJT from Diodes Zetex makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 330 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
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