| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | SOT-23 |
| Number of Positions | 3 Position |
| Power Dissipation | 500 mW |
| DC Current Gain (hFE) | 100 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Material | Silicon |
The FMMT558 is a PNP silicon planar high voltage Bipolar Transistor offers excellent hFE characteristics at IC is equal to 100mA, -400V collector-base voltage and -150mA continuous collector current.
● Low saturation voltage
● FMMT458 Complementary NPN type
● -55 to 150°C Operating temperature range
Diodes
7 Pages / 0.38 MByte
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