TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 140 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 20.0 V |
Current Rating | 2.50 A |
Case/Package | SOT-23-3 |
Power Rating | 0.625 W |
Number of Positions | 3 Position |
Polarity | NPN |
Power Dissipation | 625 mW |
Breakdown Voltage (Collector to Emitter) | 20 V |
Continuous Collector Current | 2.5A |
hFE Min | 200 @2A, 2V |
Input Power (Max) | 625 mW |
DC Current Gain (hFE) | 100 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 625 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 3 mm |
Size-Width | 1.4 mm |
Size-Height | 1.10 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Add switching and amplifying capabilities to your electronic circuit with this NPN FMMT618TA GP BJT from Diodes Zetex. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 625 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 5 V.
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