FM24C64B-GTR Datasheet PDF - Cypress Semiconductor

Description

●The  FM24C64B  is  a  64-kilobit  nonvolatile  memory employing  an  advanced  ferroelectric  process.  A

●ferroelectric  random  access  memory  or  FRAM  is nonvolatile  and  performs  reads  and  writes  like  a RAM. It provides reliable data retention for  38  years while  eliminating  the  complexities,  overhead,  and system  level  reliability  problems  caused  by EEPROM and other nonvolatile memories.

●Features

●64K bit Ferroelectric Nonvolatile RAM

●Organized as 8,192 x 8 bits

●High Endurance 1 Trillion (1012) Read/Writes

●38 Year Data Retention

●NoDelay™ Writes

●Advanced High-Reliability Ferroelectric Process

●Fast Two-wire Serial Interface

●Up to 1 MHz maximum bus frequency

●Direct hardware replacement for EEPROM

●Supports legacy timing for 100 kHz & 400 kHz

●Low Power Operation

●5V operation

●100 µA Active Current (100 kHz)

●4 µA (typ.) Standby Current

●Industry Standard Configuration

●Industrial Temperature -40  C to +85  C

●8-pin “Green”/RoHS SOIC (-G)