| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | DIP-8 |
| Rise/Fall Time | 38ns, 24ns |
| Number of Channels | 1 Channel |
| Number of Positions | 8 Position |
| Forward Voltage | 1.43 V |
| Input Current | 16 mA |
| Power Dissipation | 295 mW |
| Rise Time | 38 ns |
| Isolation Voltage | 5 kV |
| Forward Current | 25 mA |
| Maximum Forward Voltage (Max) | 1.8 V |
| Forward Current (Max) | 25 mA |
| Fall Time | 24 ns |
| Fall Time (Max) | 24 ns |
| Fall Time (Max) | 38 ns |
| Operating Temperature (Max) | 100 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 295 mW |
| Supply Voltage | 10V ~ 30V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Height | 3.94 mm |
| Operating Temperature | -40℃ ~ 100℃ |
The FOD3182SDV is a 1-channel 8-pin high speed MOSFET Gate Driver Optocoupler consists of an aluminium gallium arsenide (AlGaAs) light emitting diode (LED) optically coupled to a CMOS detector with PMOS and NMOS output power transistors integrated circuit power stage. It is ideally suited for high frequency driving of power MOSFETS used in plasma display panels (PDPs) and high performance DC-DC converter.
● High noise immunity characterized by 50kV/µs (typical) common mode rejection
● Fast output rise/fall time - Offers lower dynamic power dissipation
● Under voltage lockout protection (UVLO) with hysteresis - optimized for driving MOSFETs
● 3A Minimum peak output current
● 250kHZ Maximum switching speed
● 8m Minimum creepage distance
● 0.5mm Minimum insulation thickness
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