| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | DIP-4 |
| Rise/Fall Time | 4µs, 3µs |
| Input Voltage (DC) | 1.20 V |
| Output Voltage | 70 V |
| Number of Circuits | 1 Circuit |
| Number of Channels | 1 Channel |
| Number of Positions | 4 Position |
| Forward Voltage | 1.2 V |
| Input Current | 50 mA |
| Power Dissipation | 0.2 W |
| Rise Time | 4 µs |
| Isolation Voltage | 5000 Vrms |
| Breakdown Voltage (Collector to Emitter) | 70 V |
| Forward Current | 50 mA |
| Output Voltage (Max) | 70 V |
| Input Current (Min) | 50 mA |
| Reverse Breakdown Voltage | 6 V |
| Maximum Forward Voltage (Max) | 1.4 V |
| Forward Current (Max) | 50 mA |
| Fall Time | 3 µs |
| Fall Time (Max) | 18 µs |
| Fall Time (Max) | 18 µs |
| Operating Temperature (Max) | 110 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 200 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 5.1 mm |
| Size-Width | 7 mm |
| Size-Height | 4 mm |
| Operating Temperature | -55℃ ~ 110℃ |
The FOD817C3SD is a 1-channel 4-pin Phototransistor Optocoupler consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor. It is suitable for digital logic inputs and microprocessor inputs.
● Minimum BVCEO of 70V guaranteed
● 850V Maximum working insulation voltage
● 8000V High allowable overvoltage
● 200-400% Current transfer ratio
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