| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 4 Pin |
| Case/Package | TO-247-3 |
| Rise/Fall Time | 12µs, 20µs |
| Number of Channels | 1 Channel |
| Number of Positions | 4 Position |
| Forward Voltage | 1.2 V |
| Power Dissipation | 200 mW |
| Rise Time | 12 µs |
| Isolation Voltage | 5 kV |
| Forward Current | 50 mA |
| Output Voltage (Max) | 80 V |
| Maximum Forward Voltage (Max) | 1.4 V |
| Forward Current (Max) | 50 mA |
| Fall Time | 20 µs |
| Operating Temperature (Max) | 110 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 200 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Operating Temperature | -55℃ ~ 110℃ |
The FOD819 consists of a gallium arsenide (GaAs) infra-red emitting diode, driving a high speed photo detector with integrated base-to-emitter resistor, R, in a 4-pin dual-in-line package. It is designed to be an improved replacement to the popular FOD817 Series when higher speed performance is required in isolated data signal transmission.
●Features
●---
● |
● High Speed Performance ~ 30kHz
● Current Transfer Ratio: 100% to 600%
● Minimum BVCEO of 40V Guaranteed
● Safety and Regulatory Approvals:
● UL1577, 5,000 VACRMS for 1 Minute
● DIN EN/IEC60747-5-5, 850V Peak Working Insulation Voltage
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