| TYPE | DESCRIPTION |
|---|
| Case/Package | AG-EASY1B-1 |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
Summary of Features:
● Low Switching Losses
● Trench IGBT 3
● V CEsat with positive Temperature Coefficient
● Low V CEsat
● Al 2O 3 Substrate with Low Thermal Restistance
● Compact Design
● Solder Contact Technology
● Rugged mounting due to integrated mounting clamps
●Benefits:
● Compact module concept
● Optimized customer’s development cycle time and cost
● Configuration flexibility
Infineon
12 Pages / 0.74 MByte
Infineon
36 Pages / 3.45 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
33 Pages / 2.24 MByte
Infineon
Trans IGBT Module N-CH 1200V 28A 130000mW 23Pin EASY1B Tray
Infineon
Trans IGBT Module N-CH 1200V 28A 130000mW 20Pin EASY1B-1 Tray
Infineon
EasyPIM™ 1B 1200V PIM IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and pre-applied Thermal Interface Material.
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Trans IGBT Module N-CH 1.2kV 28A 23Pin EASY1B-2
Infineon
Trans IGBT Module N-CH 1200V 28A 130000mW 20Pin EASY1B-1 Tray
Infineon
Trans IGBT Module N-CH 1200V 28A 130000mW 20Pin EASY1B-1 Tray
Infineon
Trans IGBT Module N-CH 1200V 28A 130000mW 23Pin EASY1B-2 Tray
Infineon
EasyPIM™ 1B 1200V PIM IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC, PressFIT Contact Technology and pre-applied Thermal Interface Material.
Infineon
EasyPIM™ 1B 1200V PIM IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and pre-applied Thermal Interface Material.
Infineon
EasyPIM™ 1B 1200V PIM IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC, PressFIT Contact Technology and pre-applied Thermal Interface Material.
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