| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | WLCSP-6 |
| Power Rating | 1.2 W |
| Number of Outputs | 1 Output |
| Number of Positions | 6 Position |
| Power Dissipation | 1200 mW |
| Rise Time | 2.7 ms |
| Output Current (Max) | 3.5 A |
| Fall Time | 30 ms |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 1200 mW |
| Input Voltage | 1.2V ~ 5.5V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 1.5 mm |
| Size-Width | 1 mm |
| Size-Height | 0.332 mm |
| Operating Temperature | -40℃ ~ 85℃ (TA) |
The FPF1038 advanced load management switch targets applications requiring a highly integrated solution for disconnecting loads powered from DC Power Rail (<6V) with stringent shutdown current targets and high load capacitances (up to 200 µF). The FPF1038 consists of slew-rate controlled low-impedance MOSFET switch (21 mΩ typical) and other integrated analog features. The slew-rate controlled turn-on characteristic prevents inrush-current and the resulting excessive voltage droop on power rails. This device has exceptionally low shutdown current drain (<1 µA maximum) that facilitate compliance in very low standby power applications. The input voltage range operates from 1.2 V to 5.5 V DC to fulfill a wide range of applications in consumer, optical, medical, storage, portable, and industrial device power management. Switch control is managed by a logic input (active HIGH) capable of interfacing directly with low-voltage control signal/GPIO with no external pull-up required. The device is packaged in advanced fully "green" 1 mm x 1.5 mm Wafer-Level Chip-Scale Packaging (WLCSP); providing excellent thermal conductivity, small footprint, and low electrical resistance for wider application usage.
●Features
●---
● |
● • 1.2 to 5.5 V Input Voltage Operating Range • Typical RDS(ON):
● 20 mΩ at VIN=5.5 V
● 21 mΩ at VIN=4.5 V
● 37 mΩ at VIN=1.8 V
● 75 mΩ at VIN=1.2 V• Slew Rate/Inrush Control with tR: 2.7 ms (Typical)• 3 A Maximum Continuous Current Capability• Low <1 µA Quiescent Current• ESD Protected: Above 8 kV HBM, 1.5 kV CDM• GPIO/CMOS-Compatible Enable Circuitry
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