| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-3-3 |
| Number of Positions | 3 Position |
| Input Capacitance | 2700 pF |
| Rise Time | 150 ns |
| Input Capacitance (Ciss) | 2700pF @25V(Vds) |
| Fall Time | 110 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.8 mm |
| Size-Width | 5 mm |
| Size-Height | 18.9 mm |
The FQA13N80_F109 is a N-channel QFET® enhancement-mode power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
● Low gate charge (68nC)
● Low Crss (30pF)
● 100% avalanche tested
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