| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-3-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.09 Ω |
| Power Dissipation | 294 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 150 V |
| Rise Time | 350 ns |
| Input Capacitance (Ciss) | 2550pF @25V(Vds) |
| Input Power (Max) | 294 W |
| Fall Time | 150 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 294000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
| Size-Length | 15.8 mm |
| Size-Width | 5 mm |
| Size-Height | 18.9 mm |
| Operating Temperature | -55℃ ~ 175℃ |
The FQA36P15 is a -150V P-channel QFET® enhancement mode Power MOSFET is produced using Fairchild"s proprietary, planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, audio amplifier, DC motor control and variable switching power applications. This product is general usage and suitable for many different applications.
● Low gate charge
● 100% Avalanche tested
● 175°C Rated junction temperature
ON Semiconductor
8 Pages / 2.27 MByte
ON Semiconductor
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