| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 250 V |
| Current Rating | 55.0 A |
| Case/Package | TO-3-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.04 Ω |
| Polarity | N-Channel |
| Power Dissipation | 310 W |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 250 V |
| Breakdown Voltage (Drain to Source) | 250 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 55.0 A |
| Rise Time | 700 ns |
| Input Capacitance (Ciss) | 6250pF @25V(Vds) |
| Input Power (Max) | 310 W |
| Fall Time | 250 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 310W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.8 mm |
| Size-Width | 5 mm |
| Size-Height | 18.9 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The FQA55N25 is a N-channel enhancement-mode Power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
● 100% Avalanche tested
● 140nC Typical low gate charge
● 125pF Typical low Crss
Fairchild
8 Pages / 0.82 MByte
Fairchild
13 Pages / 0.57 MByte
Fairchild
4 Pages / 0.62 MByte
Fairchild
Trans MOSFET N-CH 250V 55A 3Pin(3+Tab) TO-3PN Rail
Fairchild
Trans MOSFET N-CH 100V 61A 3Pin(3+Tab) TO-3P Rail
ON Semiconductor
MOSFET N-CH 250V 55A TO-3P
ON Semiconductor
MOSFET N-CH 100V 61A TO-3P
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
