| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 175 MHz |
| Number of Pins | 4 Pin |
| Case/Package | SOT-89-3 |
| Polarity | NPN |
| Power Dissipation | 4460 mW |
| Gain Bandwidth Product | 175 MHz |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| Continuous Collector Current | 2.5A |
| hFE Min | 300 @10mA, 2V |
| hFE Max | 300 |
| Input Power (Max) | 2.4 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 4460 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 4.6 mm |
| Size-Width | 2.6 mm |
| Size-Height | 1.6 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The versatility of this NPN ZXTN25100DZTA GP BJT from Diodes Zetex makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 4460 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
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