TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Case/Package | TO-3-3 |
Power Dissipation | 198W (Tc) |
Drain to Source Voltage (Vds) | 800 V |
Input Capacitance (Ciss) | 1850pF @25V(Vds) |
Power Dissipation (Max) | 198W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Obsolete |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
N-Channel 800V 7.2A (Tc) 198W (Tc) Through Hole TO-3P
ON Semiconductor
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Power MOSFET, N-Channel, QFET®, 800 V, 7 A, 1.9 Ω, TO-3P, TO-3PN 3L, 450-TUBE
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