| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.142 Ω |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 100 V |
| Rise Time | 220 ns |
| Input Capacitance (Ciss) | 400pF @25V(Vds) |
| Input Power (Max) | 2.5 W |
| Fall Time | 72 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.6 mm |
| Size-Width | 6.1 mm |
| Size-Height | 2.3 mm |
The FQD13N10LTM is a QFET® enhancement-mode N-channel Power MOSFET is produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
● Low level gate drive requirements allowing direct operation form logic drivers
● 100% Avalanche tested
● 8.7nC Typical low gate charge
● 20pF Typical low Crss
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