| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.14 Ω |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 5 V |
| Input Capacitance | 830 pF |
| Drain to Source Voltage (Vds) | 200 V |
| Rise Time | 133 ns |
| Input Capacitance (Ciss) | 1080pF @25V(Vds) |
| Input Power (Max) | 2.5 W |
| Fall Time | 62 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ |
The FQD18N20V2 is a QFET® N-channel enhancement-mode Power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
● 100% Avalanche tested
● 20nC Typical low gate charge
● 25pF Typical low Crss
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