TYPE | DESCRIPTION |
---|
Number of Pins | 3 Pin |
Case/Package | TO-252-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 1.1 Ω |
Power Dissipation | 2.5 W |
Drain to Source Voltage (Vds) | 200 V |
Rise Time | 70 ns |
Input Capacitance (Ciss) | 430pF @25V(Vds) |
Input Power (Max) | 2.5 W |
Fall Time | 25 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 2500 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Operating Temperature | -55℃ ~ 150℃ |
The FQD5P20TM is a QFET® N-channel enhancement-mode Power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
● 100% Avalanche tested
● 10nC Typical low gate charge
● 12pF Typical low Crss
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