| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -200 V |
| Current Rating | -11.5 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.36 Ω |
| Polarity | P-Channel |
| Power Dissipation | 120 W |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 11.5 A |
| Rise Time | 195 ns |
| Input Capacitance (Ciss) | 1200pF @25V(Vds) |
| Input Power (Max) | 120 W |
| Fall Time | 60 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 120W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
| Size-Length | 10.1 mm |
| Size-Width | 4.7 mm |
| Size-Height | 9.4 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FQP12P20 is a QFET® P-channel enhancement-mode Power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
● 100% Avalanche tested
● 31nC Typical gate charge
● 30pF Typical low Crss
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