| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 800 V |
| Current Rating | 3.00 A |
| Case/Package | TO-220-3 |
| Drain to Source Resistance (on) (Rds) | 4.80 Ω |
| Polarity | N-Channel |
| Power Dissipation | 107 W |
| Drain to Source Voltage (Vds) | 800 V |
| Breakdown Voltage (Drain to Source) | 800 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 3.00 A |
| Rise Time | 40 ns |
| Input Capacitance (Ciss) | 690pF @25V(Vds) |
| Fall Time | 30 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 107W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Size-Length | 10.67 mm |
| Size-Width | 4.7 mm |
| Size-Height | 16.3 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
General Description
●These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
●Features
●• 3.0A, 800V, RDS(on)= 5.0Ω@VGS= 10 V
●• Low gate charge ( typical 15 nC)
●• Low Crss ( typical 7.0 pF)
●• Fast switching
●• 100% avalanche tested
●• Improved dv/dt capability
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