| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-220 |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 5A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
General Description
●These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
●Features
●• 5.0A, 600V, RDS(on) = 2.0Ω @VGS = 10 V
●• Low gate charge ( typical 16 nC)
●• Low Crss ( typical 9.0 pF)
●• Fast switching
●• 100% avalanche tested
●• Improved dv/dt capability
Fairchild
8 Pages / 0.66 MByte
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