| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 32.6 A |
| Case/Package | TO-220-3 |
| Drain to Source Resistance (on) (Rds) | 21.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 47 W |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 32.6 A |
| Input Capacitance (Ciss) | 1630pF @25V(Vds) |
| Power Dissipation (Max) | 47W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Rail, Tube |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
General Description
●These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,
●planar stripe, DMOS technology.
●Features
●• 32.6A, 60V, RDS(on)= 0.021Ω@VGS= 10 V
●• Low gate charge ( typical 24.5 nC)
●• Low Crss ( typical 90 pF)
●• Fast switching
●• 100% avalanche tested
●• Improved dv/dt capability
●• 175°C maximum junction temperature rating
Fairchild
8 Pages / 0.64 MByte
Fairchild
Trans MOSFET N-CH 60V 31A 3Pin(3+Tab) TO-220F Rail
ON Semiconductor
MOSFET N-CH 60V 31A TO-220F
Fairchild
Trans MOSFET N-CH 60V 32.6A 3Pin(3+Tab) TO-220F Rail
ON Semiconductor
MOSFET N-CH 60V 32.6A TO-220F
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