TYPE | DESCRIPTION |
---|
Number of Pins | 11 Pin |
Case/Package | AG-ECONOD-3 |
Power Dissipation | 1.6 kW |
Breakdown Voltage (Collector to Emitter) | 1200 V |
Input Capacitance (Cies) | 18.5nF @25V |
Input Power (Max) | 1600 W |
Operating Temperature (Max) | 150 ℃ |
Power Dissipation (Max) | 1600000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tray |
Operating Temperature | -40℃ ~ 150℃ |
Summary of Features:
● Low V(CEsat)
● T(vj op) = 150°C
● Standard Housing
●Benefits:
● Compact Modules
● Easy and most reliable assembly
● No Plugs and Cables required
● Ideal for Low Inductive System Designs
Infineon
1 Pages / 0.51 MByte
Infineon
36 Pages / 3.45 MByte
Infineon
1 Pages / 0.51 MByte
Infineon
33 Pages / 2.24 MByte
Infineon
1 Pages / 0.13 MByte
Infineon
Trans IGBT Module N-CH 1200V 450A 1600000mW 11Pin Tray
Infineon
IGBT Module N-CH 1.2kV 450A AG-ECONOD-3
Infineon
Trans IGBT Module N-CH 1200V 450A 1600000mW 11Pin ECONOD-4 Tray
Infineon
Trans IGBT Module N-CH 1200V 450A 1600000mW 11Pin ECONOD-3 Tray
Infineon
EconoDUAL™ 3 1200V dual IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled HE Diode, NTC, PressFIT Contact Technology and pre-applied Thermal Interface Material.
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.