| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 800 V |
| Current Rating | 8.00 A |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 1.55 Ω |
| Polarity | N-CH |
| Power Dissipation | 59 W |
| Drain to Source Voltage (Vds) | 800 V |
| Breakdown Voltage (Drain to Source) | 800 V |
| Continuous Drain Current (Ids) | 8.00 A |
| Rise Time | 110 ns |
| Input Capacitance (Ciss) | 2050pF @25V(Vds) |
| Input Power (Max) | 59 W |
| Fall Time | 70 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 59W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.67 mm |
| Size-Width | 4.7 mm |
| Size-Height | 16.3 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
General Description
●These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
●This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
●Features
●• 8A, 800V, RDS(on)= 1.55Ω@VGS= 10 V
●• Low gate charge ( typical 35 nC)
●• Low Crss ( typical 13 pF)
●• Fast switching
●• 100% avalanche tested
●• Improved dv/dt capability
●• RoHS Compliant
Fairchild
11 Pages / 1.11 MByte
Fairchild
12 Pages / 1.67 MByte
Fairchild
FAIRCHILD SEMICONDUCTOR FQPF8N80C Power MOSFET, N Channel, 8A, 800V, 1.29Ω, 10V, 5V
ON Semiconductor
Trans MOSFET N-CH 800V 8A 3Pin(3+Tab) TO-220F Tube
Fairchild
Trans MOSFET N-CH 800V 8A 3Pin(3+Tab) TO-220F Tube
ON Semiconductor
MOSFET N-CH 800V 8A TO-220F
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
