| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | TO-261-4 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 1.1 Ω |
| Power Dissipation | 2.2 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 200 V |
| Rise Time | 70 ns |
| Input Capacitance (Ciss) | 310pF @25V(Vds) |
| Input Power (Max) | 2.2 W |
| Fall Time | 40 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.2W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.5 mm |
| Size-Width | 3.56 mm |
| Size-Height | 1.6 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FQT4N20LTF is a N-channel enhancement-mode Power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
● Low level gate drive requirements allowing direct operation from logic drives
● 100% Avalanche tested
● 4nC Typical low gate charge
● 6pF Typical low Crss
ON Semiconductor
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