| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | TO-251 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.185 Ω |
| Polarity | P-Channel |
| Power Dissipation | 38 W |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | 9.40 A |
| Rise Time | 40.0 ns |
| Operating Temperature (Max) | 150 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
The FQU11P06 is a -60V P-channel QFET® enhancement mode Power MOSFET is produced using Fairchild"s proprietary, planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, audio amplifier, DC motor control and variable switching power applications. This product is general usage and suitable for many different applications.
● Low gate charge
● 100% Avalanche tested
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