| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-251-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.185 Ω |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 60 V |
| Rise Time | 40 ns |
| Input Capacitance (Ciss) | 420pF @25V(Vds) |
| Input Power (Max) | 2.5 W |
| Fall Time | 45 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
| Size-Length | 6.6 mm |
| Size-Width | 2.3 mm |
| Size-Height | 6.1 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The FQU11P06 is a -60V P-channel QFET® enhancement mode Power MOSFET is produced using Fairchild"s proprietary, planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, audio amplifier, DC motor control and variable switching power applications. This product is general usage and suitable for many different applications.
● Low gate charge
● 100% Avalanche tested
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Trans MOSFET P-CH 60V 9.4A 3Pin(3+Tab) IPAK
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Trans MOSFET P-CH 60V 9.4A 3Pin(3+Tab) IPAK Tube
ON Semiconductor
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