| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-251-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.11 Ω |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 60 V |
| Rise Time | 100 ns |
| Input Capacitance (Ciss) | 690pF @25V(Vds) |
| Input Power (Max) | 2.5 W |
| Fall Time | 60 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
| Size-Length | 6.8 mm |
| Size-Width | 2.5 mm |
| Size-Height | 7.57 mm |
The FQU17P06 is a P-channel enhancement mode power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength.
● Low gate charge
● 100% Avalanche tested
● Low crss (typical 80pF)
● ±25V Gate-source voltage
ON Semiconductor
9 Pages / 1.4 MByte
ON Semiconductor
11 Pages / 1.55 MByte
ON Semiconductor
Power MOSFET, P-Channel, QFET®, -60 V, -12 A, 135 mΩ, IPAK, 5040-TUBE
Fairchild
Trans MOSFET P-CH 60V 12A 3Pin(3+Tab) IPAK Tube
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