| TYPE | DESCRIPTION |
|---|
| Number of Pins | 4 Pin |
| Case/Package | AG-62MM-2 |
| Power Dissipation | 2.5 kW |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Input Capacitance (Cies) | 26nF @25V |
| Input Power (Max) | 2500 W |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 2500000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tray |
| Operating Temperature | -40℃ ~ 125℃ |
Summary of Features:
● High Short Circuit Capability, Self Limiting Short Circuit Current
● Low Switching Losses
● Unbeatable Robustness
● V CEsat with positive Temperature Coefficient
● Package with CTI > 400
● High Creepage and Clearance Distances
● Isolated Base Plate
● Copper Base Plate
● Standard Housing
●Benefits:
● Flexibility
● Optimal electrical performance
● Highest reliability
Infineon
9 Pages / 0.85 MByte
Infineon
36 Pages / 3.45 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
40 Pages / 6.73 MByte
Infineon
1 Pages / 0.13 MByte
Infineon
Trans IGBT Module N-CH 1200V 510A 2500000mW 4Pin 62MM Tray
Infineon
Trans IGBT Module N-CH 1200V 510A 2500000mW 4Pin Tray
Infineon
Our well-known 62mm 1200V single switch IGBT modules with IGBT2 Fast for high-frequency switching and pre-applied Thermal Interface Material are the right choice for your design.
Infineon
Our well-known 62mm 1200V single switch IGBT modules with IGBT2 Fast for high-frequency switching and pre-applied Thermal Interface Material are the right choice for your design.
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