| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | TO-261-4 |
| Polarity | NPN |
| Power Dissipation | 2 W |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| Continuous Collector Current | 1.5A |
| hFE Min | 1000 @1A, 5V |
| Input Power (Max) | 1.25 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Gain Bandwidth | 200MHz (Min) |
| Power Dissipation (Max) | 2000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Compared to other transistors, the NPN FZT7053TA Darlington transistor from Diodes Zetex can provide you with a higher current gain value. This product"s maximum continuous DC collector current is 1.5 A, while its minimum DC current gain is 10000@100mA@5 V|1000@1A@5V. It has a maximum collector emitter saturation voltage of 1.5@0.1mA@100mA V. This Darlington transistor array"s maximum emitter base voltage is 12 V. Its maximum power dissipation is 2000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This Darlington transistor array has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 12 V.
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