| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-3 |
| Number of Positions | 3 Position |
| Polarity | N-Channel |
| Power Dissipation | 170 W |
| Rise Time | 70 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Junction Temperature (Max) | 150 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended |
| Operating Temperature | -55℃ ~ 150℃ |
The GT30J324 is a 4th generation N-channel silicon Insulated Gate Bipolar Transistor (IGBT) for use with high power and fast switching applications.
● Enhancement-mode
● FRD included between emitter and collector
● 2V Low saturation voltage
Toshiba
7 Pages / 0.31 MByte
Toshiba
7 Pages / 0.15 MByte
Toshiba
1 Pages / 0.1 MByte
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Trans IGBT Chip N-CH 600V 30A 170000mW 3Pin(3+Tab) TO-3PN Sack
Toshiba
Trans IGBT Chip N-CH 600V 30A 120000mW 3Pin(3+Tab) TO-3PN Magazine
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Trans IGBT Chip N-CH 600V 30A 170000mW 3Pin(3+Tab) TO-3PN
Toshiba
Trans IGBT Chip N-CH 600V 30A 3Pin(3+Tab) TO-3P(N)IS
T-Global Technology
Gt30 Sheet 150x150x0.23mm
Toshiba
Trans IGBT Chip N-CH 600V 30A 3Pin(3+Tab) TO-3PN
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