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GT60N321(Q)
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GT60N321(Q) Datasheet PDF - Toshiba

Manufacturer:Toshiba
Category:IGBTs
Case Package:TO-3
Description:IGBT 1000V 60A 170W TO3P LH
Documentation:GT60N321(Q) Datasheet (6 Pages)
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GT60N321(Q) Datasheet PDF (6 Pages)
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GT60N321(Q) Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-3
Power Rating170 W
Breakdown Voltage (Collector to Emitter)1000 V
Reverse recovery time2.5 µs
Input Power (Max)170 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
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GT60N321(Q) Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusObsolete
PackagingTube
Operating Temperature150℃ (TJ)
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GT60N321(Q) Documents

GT60N321(Q) Datasheet
Toshiba
6 Pages / 0.2 MByte
GT60N321(Q) Other Datasheet PDF
Toshiba
6 Pages / 0.18 MByte

GT60N321 Documents

GT60N321 Datasheet PDF
Toshiba
IGBT 1000V 60A 170W TO3P LH
GT60N321(Q) Datasheet PDF
Toshiba
IGBT 1000V 60A 170W TO3P LH
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