| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 6 Pin |
| Case/Package | DIP-6 |
| Output Voltage | 30.0 V |
| Number of Channels | 1 Channel |
| Number of Positions | 6 Position |
| Forward Voltage | 1.3 V |
| Input Current | 60.0 mA |
| Power Dissipation | 0.3 W |
| Isolation Voltage | 7500 Vpk |
| Forward Current | 60 mA |
| Output Voltage (Max) | 30 V |
| Input Current (Min) | 60 mA |
| Reverse Breakdown Voltage | 5 V |
| Maximum Forward Voltage (Max) | 1.75 V |
| Forward Current (Max) | 60 mA |
| Operating Temperature (Max) | 100 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 300 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Height | 3.53 mm |
| Operating Temperature | -40℃ ~ 100℃ |
The H11F1M is a H11FXM series Bilateral Analog FET Output Optocoupler consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals.
● =300MR (As a remote variable resistor)
● >=100GR I/O isolation resistance (As a remote variable resistor)
● Extremely low offset voltage (as an analog switch)
● 60Vpk-pk signal capability (As an analog switch)
● No charge injection or latch-up (As an analog switch)
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