TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 6 Pin |
Case/Package | DIP-6 |
Number of Channels | 1 Channel |
Number of Positions | 6 Position |
Forward Voltage | 1.3 V |
Power Dissipation | 260 mW |
Rise Time | 5 µs |
Isolation Voltage | 7.5 kV |
Forward Current | 60 mA |
Output Voltage (Max) | 100 V |
Input Current (Min) | 60 mA |
Reverse Breakdown Voltage | 6 V |
Maximum Forward Voltage (Max) | 1.5 V |
Forward Current (Max) | 60 mA |
Fall Time | 100 µs |
Operating Temperature (Max) | 100 ℃ |
Operating Temperature (Min) | -40 ℃ |
Power Dissipation (Max) | 260 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Bulk |
Size-Length | 8.89 mm |
Size-Width | 6.6 mm |
Size-Height | 3.53 mm |
Operating Temperature | -40℃ ~ 100℃ |
The H11G1M is a 6-pin high voltage photodarlington-type optically Coupled Optocoupler consists of gallium-arsenide infrared emitting diode coupled with a silicon Darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics. It is suitable for CMOS logic interface, telephone ring detector, low input TTL interface and replace pulse transformer.
● 100µA at 80°C Maximum low leakage current
● 850V Maximum working insulation voltage
● 6000V High allowable overvoltage
Fairchild
9 Pages / 0.21 MByte
Fairchild
12 Pages / 0.35 MByte
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