| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 0Hz ~ 10GHz |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | 8.00 V |
| Current Rating | 30.0 mA |
| Case/Package | SOIC-8 |
| Number of Channels | 1 Channel |
| Number of Positions | 8 Position |
| Polarity | NPN |
| hFE Min | 40 @10mA, 3V |
| hFE Max | 40 @10mA, 3V |
| DC Current Gain (hFE) | 70 |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -40℃ ~ 85℃ |
The HFA3101BZ is a NPN Gilbert cell UHF Bipolar Transistor Array configured as a multiplier cell. It achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics that have been maximized through careful attention to circuit design and layout, making this product ideal for communication circuits. It is suitable for use in mixer applications and the cell provides high gain and good cancellation of 2nd order distortion terms.
● 3.5dB Low noise figure (transistor)
● <0.01nA Low collector leakage current
● Excellent hFE and VBE matching
● Pin to pin compatible to UPA101
● -40 to 85°C Temperature range
Intersil
12 Pages / 0.79 MByte
Intersil
12 Pages / 0.88 MByte
Intersil
Gilbert Cell UHF Transistor Array
Intersil
Trans GP BJT NPN 8V 0.03A 8Pin SOIC N
Intersil
Trans GP BJT NPN 8V 0.03A 8Pin SOIC N
Intersil
Trans GP BJT NPN 8V 0.03A 8Pin SOIC N T/R
Renesas Electronics
Trans RF BJT NPN 8V 0.03A 8Pin SOIC N Tube
Renesas Electronics
Trans RF BJT NPN 8V 0.03A 8Pin SOIC N T/R
Intersil
Gilbert Cell UHF Transistor Array
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
