| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 16 Pin |
| Case/Package | SOIC-16 |
| Number of Positions | 16 Position |
| Power Dissipation | 150 mW |
| Breakdown Voltage (Collector to Emitter) | 15 V |
| hFE Min | 20 @10mA, 2V |
| Input Power (Max) | 150 mW |
| DC Current Gain (hFE) | 60 |
| Operating Temperature (Max) | 125 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Operating Temperature | 150℃ (TJ) |
The HFA3128BZ is a PNP ultra-high frequency Bipolar Transistor Array consists of five dielectrically isolated transistors on a common monolithic substrate. The transistor exhibits a fT of 5.5GHz, low noise (3.5dB), making them ideal for high frequency amplifier and mixer applications. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of this transistor array provides close electrical and thermal matching of the five transistors.
● 3.5dB Noise figure (50R) at 1GHz
● <1pA Collector to collector leakage
● Complete isolation between transistors
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