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HGT1S10N120BNS
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HGT1S10N120BNS Datasheet PDF - ON Semiconductor

Manufacturer:ON Semiconductor
Case Package:TO-263-3
Description:Trans IGBT Chip N-CH 1200V 35A 298000mW 3Pin(2+Tab) D2PAK Tube
Documentation:HGT1S10N120BNS Datasheet (8 Pages)Part Numbering System on1 Page
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HGT1S10N120BNS Datasheet PDF (8 Pages)
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HGT1S10N120BNS Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins3 Pin
Case/PackageTO-263-3
Power Dissipation298000 mW
Breakdown Voltage (Collector to Emitter)1200 V
Input Power (Max)298 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)298000 mW
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HGT1S10N120BNS Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Operating Temperature-55℃ ~ 150℃ (TJ)
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HGT1S10N120BNS Documents

HGT1S10N120BNS Datasheet
ON Semiconductor
8 Pages / 0.19 MByte
HGT1S10N120BNS Other Datasheet PDF
ON Semiconductor
18 Pages / 0.94 MByte

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