| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 463 W |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 55 ns |
| Input Power (Max) | 463 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 463000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The HGTG30N60A4D is a 600V N-channel IGBT with anti-parallel hyper fast diode. This SMPS series is a member of the MOS gated high voltage switching IGBT family. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. Offers lower conduction loss and lower switching loss for designing high efficiency and reliable systems. Fairchild offers an extensive portfolio of IGBT devices by various process technologies from 300V to greater than 1200V. Optimized manufacturing process results in better control and repeatability of the top-side structure, resulting in tighter specifications and better EMI performance. This product is general usage and suitable for many different applications.
● 60ns at TJ = 125°C Fall time
ON Semiconductor
9 Pages / 0.16 MByte
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Fairchild
Trans IGBT Chip N-CH 600V 75A 463000mW 3Pin(3+Tab) TO-247 Rail
ON Semiconductor
Trans IGBT Chip N-CH 600V 75A 463000mW 3Pin(3+Tab) TO-247 Tube
Intersil
600V, SMPS Series N-Channel IGBT
Fairchild
Trans IGBT Chip N-CH 600V 75A 463000mW 3Pin(3+Tab) TO-247 Rail
ON Semiconductor
Trans IGBT Chip N-CH 600V 75A 463000mW 3Pin(3+Tab) TO-247 Tube
Intersil
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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