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HGTG5N120BND
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HGTG5N120BND Datasheet PDF - ON Semiconductor

Manufacturer:ON Semiconductor
Case Package:TO-247-3
Description:Trans IGBT Chip N-CH 1200V 21A 167000mW 3Pin(3+Tab) TO-247 Tube
Documentation:HGTG5N120BND Datasheet (8 Pages)Part Numbering System on1 Page
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HGTG5N120BND Datasheet PDF (8 Pages)
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HGTG5N120BND Specifications

TYPEDESCRIPTION
Number of Pins3 Pin
Case/PackageTO-247-3
Power Dissipation167000 mW
Breakdown Voltage (Collector to Emitter)1200 V
Reverse recovery time65 ns
Input Power (Max)167 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)167000 mW
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HGTG5N120BND Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
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HGTG5N120BND Documents

HGTG5N120BND Datasheet
ON Semiconductor
8 Pages / 0.19 MByte
HGTG5N120BND Other Datasheet PDF
ON Semiconductor
10 Pages / 0.28 MByte

HGTG5N120 Documents

HGTG5N120BND Datasheet PDF
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