The HGTD3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C.
●Features
●• 6A, 600V at TC = 25°C
●• 600V Switching SOA Capability
●• Typical Fall Time. . . . . . . . . . . . . . . . 130ns at TJ = 150°C
●• Short Circuit Rating
●• Low Conduction Loss
●• Related Literature
● - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Fairchild
6 Pages / 0.35 MByte
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