| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 34.0 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Polarity | N-Channel |
| Power Dissipation | 125 W |
| Rise Time | 11 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Input Power (Max) | 125 W |
| Fall Time | 45 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ |
The HGTP7N60A4 is a SMPS IGBT combines the best features of high input impedance of a MOSFET and the low ON-state conduction loss of a bipolar transistor. It is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
● 1.9V @ IC = 7A Low saturation voltage
● 75ns Fall time @ TJ = 125°C
● 125W Total power dissipation @ TC = 25°C
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