TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 0Hz ~ 6GHz |
Number of Pins | 16 Pin |
Supply Voltage (DC) | 5.00V (max) |
Case/Package | VFQFN-16 |
Supply Current | 74 mA |
Number of Positions | 16 Position |
Power Dissipation | 339 mW |
Output Power | 15.5 dBm |
Gain | 14 dB |
Operating Temperature (Max) | 85 ℃ |
Operating Temperature (Min) | -40 ℃ |
Power Dissipation (Max) | 339 mW |
Supply Voltage | 5 V |
Supply Voltage (Max) | 5 V |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Cut Tape (CT) |
Size-Length | 3.1 mm |
Size-Width | 3.1 mm |
Size-Height | 1 mm |
Operating Temperature | -40℃ ~ 85℃ |
Product Details
●The HMC311LP3(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT DC to 6 GHz amplifiers. This 3x3mm QFN packaged amplifier can be used as either a cascadable 50 Ohm gain stage or to drive the LO of HMC mixers with up to +17 dBm output power. The HMC311LP3(E) offers 14.5 dB of gain and an output IP3 of +32 dBm while requiring only 56 mA from a +5V supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components.
●Applications
● Cellular / PCS / 3G
● Fixed Wireless & WLAN
● CATV & Cable Modem
● Microwave Radio
●### Features and Benefits
● P1dB Output Power: +15.5 dBm
● Output IP3: +32 dBm
● Gain: 14.5 dB
● 50 Ohm I/O’s
● 16 Lead 3x3 mm SMT Package: 9mm²
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